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Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs

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5 Author(s)
Huili Xing ; Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA ; Chavarkar, P.M. ; Keller, Stacia ; DenBaars, Steven P.
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N-p-n Al/sub 0.05/GaN/GaN heterojunction bipolar transistors with a common emitter operation voltage higher than 330 V have been demonstrated using selectively regrown emitters. Devices were grown by metalorganic chemical vapor deposition on sapphire substrates. The n-type emitter was grown selectively on a 100-nm-thick p-base with an 8 /spl mu/m n-collector structure using a dielectric mask. The shallow etch down to the collector mitigates damages induced in the dry etch, resulting a low leakage and a high breakdown. The graded AlGaN emitter results in a common emitter current gain of /spl sim/18 at an average collector current density of up to 1 kA/cm/sup 2/ at room temperature.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 3 )

Date of Publication:

March 2003

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