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Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes

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8 Author(s)
Chang, S.J. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Chen, C.H. ; Su, Y.K. ; Sheu, J.K.
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GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 3 )