Cart (Loading....) | Create Account
Close category search window

A mixed-mode ESD protection circuit simulation-design methodology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Haigang Feng ; Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA ; Guang Chen ; Rouying Zhan ; Qiong Wu
more authors

On-chip electrostatic discharge (ESD) protection design becomes a major design challenge as IC technologies continue to migrate into very-deep-submicron (VDSM) regime. However, trial-and-error approaches still dominate in ESD protection circuit design. This paper discusses a new mixed-mode ESD protection simulation-design methodology, aiming to design prediction, which involves multiple-level coupling in ESD protection simulation by solving complex electrothermal equations self-consistently at process, device, and circuit levels in a coupled fashion to investigate ESD protection circuit details without any pre-assumption. Practical ESD protection design examples, implemented in commercial 0.18/0.35-μm CMOS and BiCMOS processes, are presented.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:38 ,  Issue: 6 )

Date of Publication:

June 2003

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.