By Topic

CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Watanabe, H. ; Electron. Devices Co., Ricoh Co. Ltd., Osaka, Japan ; Ando, S. ; Aota, H. ; Dainin, M.
more authors

A new CMOS voltage reference circuit consisting of two pairs of transistors is presented. One pair exhibits a threshold voltage difference with a negative temperature coefficient (-0.49 mV/°C), while the other exhibits a positive temperature coefficient (+0.17 mV/°C). The circuit was robust to process variations and exhibited excellent temperature independence and stable output voltage. Aside from conductivity type and impurity concentrations of gate electrodes, transistors in the pairs were identical, meaning that the system was robust with respect to process fluctuations. Measurements of the voltage reference circuit without trimming adjustments revealed that it had excellent output voltage reproducibility of within ±2%, low temperature coefficient of less than 80 ppm/°C, and low current consumption of 0.6 μA.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:38 ,  Issue: 6 )