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CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration

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6 Author(s)
Watanabe, H. ; Electron. Devices Co., Ricoh Co. Ltd., Osaka, Japan ; Ando, S. ; Aota, H. ; Dainin, M.
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A new CMOS voltage reference circuit consisting of two pairs of transistors is presented. One pair exhibits a threshold voltage difference with a negative temperature coefficient (-0.49 mV/°C), while the other exhibits a positive temperature coefficient (+0.17 mV/°C). The circuit was robust to process variations and exhibited excellent temperature independence and stable output voltage. Aside from conductivity type and impurity concentrations of gate electrodes, transistors in the pairs were identical, meaning that the system was robust with respect to process fluctuations. Measurements of the voltage reference circuit without trimming adjustments revealed that it had excellent output voltage reproducibility of within ±2%, low temperature coefficient of less than 80 ppm/°C, and low current consumption of 0.6 μA.

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Solid-State Circuits, IEEE Journal of  (Volume:38 ,  Issue: 6 )