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Several basic small-signal equivalent-circuit models for bipolar transistors lead to simple analytical expressions for the model parameters in terms of measured values. This paper investigates the accuracy of these expressions for real transistors by applying the direct extraction equations to more complicated small-signal models. The extraction of the base/collector capacitance, base/emitter capacitance, and emitter resistance are considered. Analytically derived trends are illustrated using measurements on small-area high-speed InP/GaAsSb/InP double heterojunction bipolar transistors.