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On-wafer noise-parameter measurements at W-band

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4 Author(s)
T. Vaha-Heikkila ; Millimeter Wave Lab. of Finland-Millilab, Espoo, Finland ; M. Lahdes ; M. Kantanen ; J. Tuovinen

A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.

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IEEE Transactions on Microwave Theory and Techniques  (Volume:51 ,  Issue: 6 )