By Topic

On-wafer noise-parameter measurements at W-band

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Vaha-Heikkila, T. ; Millimeter Wave Lab. of Finland-Millilab, Espoo, Finland ; Lahdes, M. ; Kantanen, M. ; Tuovinen, J.

A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:51 ,  Issue: 6 )