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A capacitively coupled dose-rate-dependent transient upset mechanism in a bipolar memory

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4 Author(s)
R. M. Turfler ; Mission Res. Corp., Albuquerque, NM, USA ; R. L. Pease ; G. Dinger ; B. Armstrong

A pattern sensitivity was observed in the threshold dose rate upset response of a bipolar 16 K PROM for radiation pulse widths of 20-100 ns. For the worst case pattern, the upset threshold was a factor of three lower than for the commonly used checkerboard pattern. The mechanism or this pattern sensitivity was found to be a capacitively coupled voltage transient on a sensitive node which caused a low-to-high transition at the output. A design fix was implemented to significantly alter the ratio of the two parasitic capacitances in a capacitive divider which reduced the amplitude of the voltage transient at the sensitive node. It was demonstrated that in the redesign, the pattern sensitivity was eliminated

Published in:

IEEE Transactions on Nuclear Science  (Volume:39 ,  Issue: 1 )