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For ultra thin oxide, the preferred plasma charging damage detection method has been narrowed down to initial gate leakage. The initial gate leakage measurement can in principle distinguish stress-induced-leakage-current (SILC) from soft breakdown if the test device is small. In a previous report, we showed that the expected sharp distinction between broken devices and non-broken devices does not exist when several devices are measured for very thin oxide. Here, the explanation for the lack of sharp distinction between broken and non-broken devices is provided with the support of new data. It is clear that there is a basic difference between plasma charging stress and bench-top electrical stress of ultra thin oxide. The results indicate that, to obtain a better measure of plasma charging damage using gate leakage, a brief stress is necessary.