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Semiconductor optoelectronic devices based on interference-induced carrier modulation

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5 Author(s)
H. Merkelo ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; B. D. McCredie ; MS. Veatch ; A. G. Zocher
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Transport of carriers generated under the influence of optically induced spatial modulation is investigated theoretically and experimentally in semiconductors. The resulting transient photocurrent is studied under varied degrees of optical interference. It is shown that strong anisotropic properties describable by an interaction tensor are suitable for device applications. Device properties are characterized and are seen to be useful for the processing of optical signals with picosecond and femtosecond features. Accurate modeling demonstrates the formation of strong nodal fields whose effect is detrimental to the achievement of high current extinction. The manifestation of interference-induced carrier modulation is demonstrated with high-contrast recordings of autocorrelation of picosecond laser pulses in homogeneous materials. In other experiments, monitoring of laser coherence ranging from picoseconds to tens of femtoseconds is shown.<>

Published in:

IEEE Journal of Quantum Electronics  (Volume:24 ,  Issue: 2 )