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Integrated bulk/SOI APD sensor: bulk substrate inspection with Geiger-mode avalanche photodiodes

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7 Author(s)
Jackson, J.C. ; Nat. Microelectron. Res. Centre, Cork, Ireland ; Donnelly, J. ; O'Neill, B. ; Kelleher, A.-M.
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A rapid assessment of bulk silicon quality after removal of the silicon-on-insulator (SOI) and buried oxide layer using both plasma and wet etch is compared with standard p-epi silicon by comparing the performance of avalanche photodiodes (APD) operated in Geiger-mode. Plasma etching of the buried oxide shows lower dark counts than wet etched or standard p-epi substrates.

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Electronics Letters  (Volume:39 ,  Issue: 9 )