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The paper describes a method for the estimation of the equivalent circuit parameters for a millimetre-wave GaAs PIN diode switch. A GaAs PIN diode with low insertion loss over the millimetre-wave region is presented. The diode has been developed by estimating the parasitic resistance of the space between the P+-layer and the N+-electrode. The design and performance of a broadband single-pole single-throw (SPST) monolithic microwave integrated circuit (MMIC) switch using the GaAs PIN diode developed are also described. An insertion loss of 1.0 dB and isolation of 20 dB were obtained in the range DC to 50 GHz.