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Metallization proximity studies for copper spiral inductors on silicon

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4 Author(s)
Choon Beng Sia ; Adv. RFIC (S) Pic. Ltd., Singapore, Singapore ; Kiat Seng Yeo ; Do, A.V. ; Jian-Guo Ma

The impacts of metallization proximity for copper spiral inductors on silicon have been investigated in this paper. Performance of the spiral inductor versus area consumption tradeoff with respect to its core diameter is evaluated quantitatively for the first time. Effects of the inductor's proximate grounded metallization on its overall inductive performance are also analyzed.

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:16 ,  Issue: 2 )

Date of Publication:

May 2003

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