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HfO2/HfSixOy high-k gate stack with very low leakage current for low-power poly-Si gated CMOS application

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9 Author(s)
Yang, C.W. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Fang, Y.K. ; Chen, S.F. ; Wang, M.F.
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Poly-Si gated NMOSFETs, with HfO2/HfSixOy gate stacks for CMOS low-power application are reported for the first time. Compared to an SiO2 control sample, the HfO2/HfSixOy stack with equivalent oxide thickness of about 18 Å exhibits four-orders of magnitude reduction in gate leakage at Vg=1 V. Additionally, negligible hysteresis and comparable subthreshold swing are observed, indicating good interface quality and bulk film properties. Furthermore, the stack-caused inherent transconductance degradation is small; almost 66% of the normalised peak transconductance with respect to SiO2 can be reached.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 8 )