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High-power highly reliable 1.06 μm InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers [MOVPE]

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5 Author(s)
M. Yuda ; NTT Photonics Labs., NTT Corp., Atsugi, Japan ; J. Temmyo ; T. Sasaki ; M. Sugo
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High output power of about 800 mW in a chip and stable operation for over 14 000 h under 225 mW at 50°C have been achieved in 1.06 μm InGaAs strained-quantum-well laser diodes, which were realised by low-temperature growth of the InGaAs well layers.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 8 )