Referenced Items are not available for this document.
High output power of about 800 mW in a chip and stable operation for over 14 000 h under 225 mW at 50°C have been achieved in 1.06 μm InGaAs strained-quantum-well laser diodes, which were realised by low-temperature growth of the InGaAs well layers.
Published in:
Electronics Letters
(Volume:39
,
Issue:
8
)
Date of Publication: 17 April 2003
- Page(s):
- 661 - 662
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 7616787
- Digital Object Identifier :
- 10.1049/el:20030455
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 13 May 2003
- Issue Date :
- 17 April 2003
- Sponsored by :
- Institution of Engineering and Technology
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