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Variable stress-induced leakage current and analysis of anomalous charge loss for flash memory application

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2 Author(s)
Yamada, Ren-ichi ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Tsu-Jae King

In advanced flash-EEPROM devices, the retention time is limited by "moving bit" (MB), "fast bit" or "anomalous cells", which exhibit anomalously large threshold-voltage shift (ΔVT). Since the MB is caused by anomalous charge loss through the tunnel oxide, the characterization of stress-induced leakage current (SILC) in suitable metal-oxide-semiconductor (MOS) capacitor test structures should be useful for determining the responsible mechanism. SILC is too small to measure in a commercial flash memory cell, so large-area capacitors have generally been used to characterize the leakage current. However, since the MB corresponds to the tail portion of the retention-time distribution, the erratic behavior has not been observed in large capacitors. We have therefore used small-area capacitors with thinner oxide for SILC analysis in this study.

Published in:

Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International

Date of Conference:

30 March-4 April 2003

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