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Improvement of responsivity of a room temperature 10.6 μm sensor using an intra-band transition

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1 Author(s)
Kikuchi, Kazuo ; Dept. of Electr. Eng., Nat. Defense Acad., Yokosuka, Japan

An improvement in the responsivity of room temperature 10.6-μm sensors based on an intra-band transition is proposed. The sensor, fabricated in p-type germanium, forms a resonator. An improvement of 20 dB in the responsivity is obtained at zero bias voltage. This is comparable to values for sensors based on uncooled HgCdTe

Published in:

Instrumentation and Measurement, IEEE Transactions on  (Volume:40 ,  Issue: 6 )

Date of Publication:

Dec 1991

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