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Direct, fast, and accurate measurement of VT and K of an MOS transistor using a VT-sift circuit

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1 Author(s)
Wang, Z. ; Dept. of Electr. Eng., Swiss Federal Inst. of Technol., Zurich, Switzerland

Based on a VT-sift circuit, a new characterization technique is presented with which the value of both K, the transconductance constant, and VT, the device threshold voltage, of an MOS transistor can be measured directly, obtained from the drain current of the device to be tested and the voltage difference between the output and input nodes of the V T-sift circuit, respectively. The proposed method has been verified experimentally and compared advantageously with the commonly used linear regression technique in transistor characterization and wafer manufacturing. An additional application field of the V T-sift circuit is temperature compensation of analog circuits

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Instrumentation and Measurement, IEEE Transactions on  (Volume:40 ,  Issue: 6 )