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A switched-LNA in 0.18 /spl mu/m CMOS for Bluetooth applications

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5 Author(s)
Krug, F. ; Lehrstuhl fur Hochfrequenztechnik, Technische Univ. Munchen, Germany ; Russer, P. ; Beffa, F. ; Bachtold, W.
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A 2.45 GHz switched low-noise amplifier (LNA), intended for use in an integrated Bluetooth receiver, was implemented in a standard 0.18 /spl mu/m CMOS process. The LNA is optimized for a fully integrated mixer stage, with a mixer-input capacitance of 150 fF. The amplifier provides a switchable gain (|S/sub 21/|/sup 2/) of 7 dB/-17 dB with a noise figure (NF) of 3 dB in a 50 /spl Omega/ measurement environment. The power consumption is 7.6 mW from a 1.8 V supply. The die area of the LNA is 0.79 mm/sup 2/.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Date of Conference:

11-11 April 2003