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Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM

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5 Author(s)
Urata, R. ; Dept. of Electr. Eng., Stanford Univ., CA, USA ; Takahashi, R. ; Sabnis, V.A. ; Miller, D.A.B.
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We demonstrate 20-GHz input bandwidth of an optoelectronic sample-and-hold circuit using optically triggered metal-semiconductor-metal switches made of low-temperature-grown GaAs. Linearity /spl ges/4 effective-number-of-bits and an estimated 3-dB bandwidth of up to /spl sim/63 GHz are observed for the sample-and-hold process, making the device a potential candidate for moderate resolution, high-speed sampling applications.

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Photonics Technology Letters, IEEE  (Volume:15 ,  Issue: 5 )