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Lossless electroabsorption modulator monolithically integrated with a semiconductor optical amplifier and a passive waveguide

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8 Author(s)
Asaka, K. ; NTT Photonics Labs., NTT Corp., Kanagawa, Japan ; Suzaki, Y. ; Kawaguchi, Y. ; Kondo, S.
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We have developed a monolithic integrated device consisting of an electroabsorption modulator and a semiconductor optical amplifier (SOA) connected by a deep-ridge passive waveguide by means of butt-joint selective area growth. Lossless operation with a high extinction ratio of 32 dB and clear eye opening at 10 Gb/s are successfully achieved. We confirm that the optical injection should be from the SOA side of the device to obtain a wide error-free range of incident optical power from -20 to +10 dBm. Our device could lead to richly functional photonic integrated circuits comprising arrayed waveguide gratings (AWGs) for advanced wavelength-division-multiplexing networks, since the passive waveguide has the same structure as AWGs.

Published in:

Photonics Technology Letters, IEEE  (Volume:15 ,  Issue: 5 )