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Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

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5 Author(s)
Shyi-Ming Pan ; Opto-Electron. & Syst. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan ; Ru-Chin Tu ; Yu-Mei Fan ; Yeh, R.-C.
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Presents a surface-textured indium-tin-oxide (ITO) transparent ohmic contact layer on p-GaN to increase the optical output of nitride-based light-emitting diodes (LED) without destroying the p-GaN. The surface-textured ITO layer was prepared by lithography and dry etching, and dimensions of the regular pattern were approximately 3 × 3 μm. The operating voltage of the surface-textured LED was almost the same as that of the typical planar LED since the ITO layer was in ohmic contact with the p-GaN. The experimental results indicate that the surface-textured ITO layer is suitable for fabricating high-brightness GaN-based light emitting devices.

Published in:

Photonics Technology Letters, IEEE  (Volume:15 ,  Issue: 5 )