By Topic

Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yu, Tsung-Hsing ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Brennan, Kevin F.

We present a theoretical model of an AlGaN-GaN high electron mobility field effect transistor (HEMT) that includes a nonlinear model of the strain polarization fields produced at the heterointerface. Recent experimental work has indicated that the macroscopic polarization in III-nitride alloys is a nonlinear function of the material composition. It is well known that the behavior of a GaN-AlGaN HEMT depends greatly upon the properties of the strain-induced polarization fields formed at the GaN-AlGaN heterointerface. It is the purpose of this paper to provide a detailed model of a GaN-AlGaN HEMT that includes a nonlinear formulation of the polarization. The model is found to agree well with recent experimental measurements made for GaN-AlGaN HEMTs when the nonlinear polarization model is included. The cutoff frequency, transconductance, and current-voltage characteristics are computed. The effect of the nonlinear polarization model on the sheet carrier density is also presented.

Published in:

Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 2 )