Cart (Loading....) | Create Account
Close category search window

Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Bufler, F.M. ; Inst. fur Integrierte Syst., ETH Zurich, Switzerland ; Fichtner, Wolfgang

The dependence of the strain-induced on-current improvement in n-MOSFETs on scaling and the crystallographic orientation of the channel is investigated by self-consistent full-band Monte Carlo simulation. For a channel orientation along the <110> direction, the enhancement decreases weakly from almost 40% to 30% as the effective gate length is reduced from 75 to 25 nm. For the <100> direction, the improvement is about 10% higher. The anisotropy of the drain current, which vanishes for small drain voltages, is attributed to the different band curvatures above 100 meV. This feature appears to be crucial for quasi-ballistic transport of the electrons in the high longitudinal field as they enter the source-side of the channel.

Published in:

Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 2 )

Date of Publication:

Feb. 2003

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.