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A nonvolatile semiconductor memory device in 6H-SiC for harsh environment applications

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3 Author(s)
Ce Li ; Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA ; J. S. Duster ; K. T. Kornegay

An electrically erasable programmable read-only memory (EEPROM) cell fabricated on a 6H-SiC substrate is reported. It is the first fully functional SiC EEPROM device. This device uses a generic double-polysilicon-gate configuration. It has been tested at both room temperature and elevated temperatures, up to 200/spl deg/C, to demonstrate full programmability. The threshold voltage shifts between programmed and erased states, at all tested temperatures, are larger than 4.5 V. In both states, the device functions satisfactorily as an n-type MOSFET. Charge retention time is more than 24 h at room temperature.

Published in:

IEEE Electron Device Letters  (Volume:24 ,  Issue: 2 )