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Characterization study of the growth and electromechanical properties of 67PMN-33PT single crystals

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4 Author(s)
C. B. DiAntonio ; Lab. for Electron. Ceramics, Alfred Univ., NY, USA ; F. A. Williams ; S. M. Pilgrim ; W. A. Schulze

A modified Bridgman approach, developed at the Shanghai Institute of Ceramics, Chinese Academy of Sciences (SICCAS), has been used to grow ferroelectric relaxor PMN-PT single crystals. A series of technological barriers on the growth of ferroelectric relaxor PMN-PT single crystals, such as making seeds, seeded-orientation control, size-enlargement, uniformity of the grown single crystals, and crucible leakage, have been progressively overcome. After poling, the electromechanical properties of the grown PMN-PT single crystals are; weak-field permittivity max (εmax) ∼ 29,000 at 162°C, 1 kHz and 1 Vrms, dielectric loss (tan δ) < 0.9%; piezoelectric coefficient d33 > 2,000 pC/N; mechanical-electric coupling factors, k33 ∼ 0.92-0.94 and kt ∼ 0.61-0.62, respectively. The electromechanical properties of the 67PMN-33PT single crystal composition are measured as a function of temperature. This analysis reveals the effects of the diffuse phase transition on the electromechanical properties as piezoelectricity in the material develops.

Published in:

Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on

Date of Conference:

28 May-1 June 2002