The nonlinear optical susceptibilities of various quantum-well Ga 1-xAlxAs compounds grown by molecular beam epitaxy were measured by pumping with a Q-switched and mode-locked Nd:YAG laser. The contribution of second-harmonic waves from the bulk nonlinear susceptibility and the electrical dipole sheet in the quantum well was calculated separately. The measured second-harmonic reflectivity decreases as the silicon doping concentration increases and its angular variation follows the Bloembergen and Pershan theory. Both the experimental and theoretical results indicate that the electron gas and dipole sheet in the unbiased single quantum wells have a negligible effect on the second-order nonlinear generation
Published in:
Quantum Electronics, IEEE Journal of
(Volume:28
,
Issue:
1
)
Date of Publication:
Jan 1992
- Page(s):
-
302
-
307
- ISSN :
-
0018-9197
- INSPEC Accession Number:
-
4123480
- Digital Object Identifier :
-
10.1109/3.119528
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
06 August 2002
- Issue Date :
-
Jan 1992
- Sponsored by :
-
IEEE Photonics Society