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Buried-oxide silicon-on-insulator structures. I. Optical waveguide characteristics

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3 Author(s)
R. M. Emmons ; Inst. of Opt., Rochester Univ., NY, USA ; B. N. Kurdi ; D. G. Hall

For pt.II, see ibid., vol.28, no.1, p.164-75 (1992). Buried-oxide silicon-on-insulator structures are analyzed using both a multilayer transfer matrix approach and a simple approximate method. Results show that these structures can support low-loss leaky modes with substrate leakage losses under 1 dB/cm. Even for a reasonably thick silicon film layer, adjacent modes of the same polarization can have loss discriminations as large as 100 dB/cm. Mode effective indexes obtained from experimental grating transmission measurements taken on waveguides fabricated with the SIMOX process agree with the theoretical analysis

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IEEE Journal of Quantum Electronics  (Volume:28 ,  Issue: 1 )