By Topic

Quantum hole transport at the heterointerface of long wavelength avalanche photodiodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Miyoshi, T. ; Dept. of Electron. Eng., Kobe Univ., Japan ; Tsuchiya, H. ; Ogawa, M.

Quantum hole transport at the heterointerfaces of InGaAs-InP long wavelength avalanche photodiodes is studied using the Wigner function model. At the heterointerface, three types of quantum size structures are inserted to eliminate the photoexcited hole trapping: the thin quaternary layer, the thin graded band-gap layer, and the doping interface dipole layer. The dependence of hole accumulation on the inserted layer structure is discussed. It is shown that the theoretical reduction limits of hole pile-up can be realized even by the insertion of quantum size layers

Published in:

Quantum Electronics, IEEE Journal of  (Volume:28 ,  Issue: 1 )