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NPN yield improvement with ozone surface treatment prior to emitter poly deposition

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11 Author(s)
Tran-Quinn, T. ; Philips Semicond., Hopewell Junction, NY, USA ; Bell, N. ; Cook, R. ; Fung, M.S.
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A localized product yield degradation was observed on 0.25um BiCMOS product and was found to correlate to suppression of the NPN base and emitter currents. The addition of an ozone plasma clean prior to emitter polysilicon deposition helped to improve base current distribution across the wafers.

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI

Date of Conference:

31 March-1 April 2003