Cart (Loading....) | Create Account
Close category search window
 

Impact of additional LDD rapid thermal annealing on submicron n-MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Qian Wensheng ; Chartered Semicond. Manuf. Ltd., Singapore, Singapore ; Leong, V.K.W. ; Wang Yuwen ; Li Yisuo
more authors

An additional NLDD Rapid Thermal Annealing (RTA) had been implemented in thin-gate and thick-gate NMOS transistors. The threshold voltage (Vt) distribution at different gate lengths was investigated for devices with and without NLDD RTA. Lower roll-up and roll-off of Vt was observed with the inclusion of NLDD RTA. However, this observation only occurred for phosphorus-LDD NMOS devices rather than arsenic-LDD NMOS devices. Based on experimental results, TCAD tools was applied to analyze the removal of implant-induced damages by LDD RTA and to investigate the difference in channel profiles before and after LDD RTA. Finally, the mechanism of less Reverse Short Channel Effect and Short Channel Effect with LDD RTA was presented through TCAD simulation results.

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI

Date of Conference:

31 March-1 April 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.