By Topic

Real time evaluation of an air leak into a dry etching equipment by means of optical emission spectroscopy: evaluation and results in high volume production regime

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ciovacco, F. ; STMicroelectronics, Agrate Brianza, Italy ; Alba, S. ; Fazio, G. ; Somboli, F.

Chamber leak test is one of the most important tests that are performed on plasma reactors for etch, CVD, etc. Optical Emission Spectroscopy OES is a powerful non-invasive tool to perform real time plasma diagnostic and in theory could be use as an alternative method to evaluate the air leak into the plasma reactor. The idea is to detect and quantify small differences in the emission spectrum of the plasma when a presence of a quantity of air is higher than the tolerated threshold. This would give the possibility to test the level of the leak chamber any time automatically during production or between wafers and hence to increase the frequency of testing. In this presentation we describe not only the method itself with the instrument set up and the test configuration adopted but also the experience acquired in high volume production regime and the numerous advantages obtained in comparison with the conventional leak rate test.

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI

Date of Conference:

31 March-1 April 2003