Skip to Main Content
An advanced three-dimensional fully self-consistent optical/electrical/thermal/gain model of a 1.3 μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser (VCSEL) has been applied to simulate its room-temperature (RT) continuous-wave (CW) performance characteristics and to enable its structure optimisation. Localisation of the AlxOy aperture has been found to have a decisive impact on the device RT CW lasing threshold. Orders of excited transverse modes have been discovered to be dramatically reduced (and device mode selectivity considerably improved) with a decrease in the lateral size of the laser active region. Hence, RT CW single-fundamental-mode operation becomes possible in small-active-region GaInNAs VCSELs.