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The paper describes the first monolithic GaAs-based semiconductor saturable absorber made for operation at 1.55 μm. An epitaxially grown absorber mirror in the GaInNAs/GaAs system was successfully used to mode-lock an erbium-doped fibre laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55 μm wavelength range.
Date of Publication: Feb 2003