Referenced Items are not available for this document.
The paper describes the first monolithic GaAs-based semiconductor saturable absorber made for operation at 1.55 μm. An epitaxially grown absorber mirror in the GaInNAs/GaAs system was successfully used to mode-lock an erbium-doped fibre laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55 μm wavelength range.
Published in:
Optoelectronics, IEE Proceedings -
(Volume:150
,
Issue:
1
)
Date of Publication: Feb 2003
- Page(s):
- 77 - 79
- ISSN :
- 1350-2433
- INSPEC Accession Number:
- 7569754
- Digital Object Identifier :
- 10.1049/ip-opt:20030049
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 15 April 2003
- Issue Date :
- Feb 2003
- Sponsored by :
- IET
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