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1.55 μm monolithic GaInNAs semiconductor saturable absorber

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5 Author(s)
Jouhti, T. ; Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland ; Konttinen, J. ; Karirinne, S. ; Okhotnikov, O.G.
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The paper describes the first monolithic GaAs-based semiconductor saturable absorber made for operation at 1.55 μm. An epitaxially grown absorber mirror in the GaInNAs/GaAs system was successfully used to mode-lock an erbium-doped fibre laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55 μm wavelength range.

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Optoelectronics, IEE Proceedings -  (Volume:150 ,  Issue: 1 )