Referenced Items are not available for this document.
The basic operation of a novel GaInNAs/GaAs based light emitting/absorbing device operating at 1250 nm is described. The device is a bi-directional field effect light emitting and absorbing heterojunction (BiFEEAH), which can simultaneously emit and detect light. This feature makes it possible to construct a wavelength converter, where one end of the device absorbs incoming light and the other end emits light at a different wavelength. The current device consists of a simple GaAs p-i-n structure, containing a single 90 Å GaInNAs quantum well in its intrinsic region. This is fabricated into a four contact device with separate n and p conducting channels.
Published in:
Optoelectronics, IEE Proceedings -
(Volume:150
,
Issue:
1
)
Date of Publication: Feb 2003
- Page(s):
- 72 - 74
- ISSN :
- 1350-2433
- INSPEC Accession Number:
- 7569752
- Digital Object Identifier :
- 10.1049/ip-opt:20030051
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 15 April 2003
- Issue Date :
- Feb 2003
- Sponsored by :
- IET
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
