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The basic operation of a novel GaInNAs/GaAs based light emitting/absorbing device operating at 1250 nm is described. The device is a bi-directional field effect light emitting and absorbing heterojunction (BiFEEAH), which can simultaneously emit and detect light. This feature makes it possible to construct a wavelength converter, where one end of the device absorbs incoming light and the other end emits light at a different wavelength. The current device consists of a simple GaAs p-i-n structure, containing a single 90 Å GaInNAs quantum well in its intrinsic region. This is fabricated into a four contact device with separate n and p conducting channels.
Date of Publication: Feb 2003