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A novel charge pumping method without using MOS transistors is proposed for obtaining a spatial distribution of interface traps in an SOI wafer. The proposed method can be performed without fabrication processes for the source/drain of MOS transistors that are essential for conventional charge pumping methods. In this method, Schottky contacts are used instead of the normal source/drain diffused layer. The results demonstrate that the proposed method is effective in applying to SOI wafer inspection.
Date of Conference: 8-11 April 2002