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A time-delay equivalent-circuit model of ultrafast p-i-n photodiodes

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6 Author(s)
Gang Wang ; Fujitsu Quantum Devices Ltd., Yamanashi, Japan ; Tokumitsu, T. ; Hanawa, I. ; Yoneda, Y.
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A time-delay equivalent-circuit model of ultrafast p-i-n photodiodes (PDs) is proposed to describe the operation at high-input power levels. This model includes both the carrier transit-induced time-delay effect and stored charge effect of p-i-n PDs in high-power operation. These effects were represented as a linear RC circuit and capacitance, respectively, both combined in parallel to a voltage-controlled current source. The validity of this model was confirmed with good curve fitting to the measured optical-frequency responses of an ultrafast side-illuminated p-i-n PD.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:51 ,  Issue: 4 )

Date of Publication:

Apr 2003

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