Cart (Loading....) | Create Account
Close category search window
 

Trap-free process and thermal limitations on large-periphery SiC MESFET for RF and microwave power

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Villard, F. ; Dept. of Radio CIME, Commun. & Micro-Wave Lab., Cergy-Pontoise, France ; Prigent, J.-P. ; Morvan, E. ; Dua, C.
more authors

In this paper, we present recent results on an SiC MESFET and we describe two of the main limitation mechanisms encountered: the self-heating and the trapping effects. Results on recent MESFET devices processed by THALES Research and Technology (TRT), Colombes, France, show that the trapping effects has been solved by using epitaxial layers on a higher purity 4H-SiC semi-insulating substrate sample made with a new technique by Okmetic, Vantaa, Finland. The association of two chips in the same case showed that the main limitation mechanism for power density originates from self-heating effects, which could be solved by optimizing the chip layout. 37.8-W output power at 500 MHz, 1.78-W/mm power density, and 35-dB third-order intermodulation-distortion ratio are the best obtained performances. An experimental analysis of trapping and self-heating effects on large-periphery SiC MESFETs is proposed in this paper.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:51 ,  Issue: 4 )

Date of Publication:

Apr 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.