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AlGaN/GaN HFET devices on SiC grown by ammonia-MBE with high fT and fMAX

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6 Author(s)
J. A. Bardwell ; Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada ; Y. Liu ; H. Tang ; J. B. Webb
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AlGaN/GaN HFET layers were grown by ammonia-MBE on SiC substrates. Fabricated devices showed excellent characteristics: a maximum drain current density > 1.25 A/mm, maximum transconductance of 250 mS/mm, fT of 103 GHz and fMAX of 170 GHz were measured for devices with 0.13 μm gate length. These are the highest ever reported for material grown by ammonia-MBE.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 6 )