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AlGaN/GaN HFET layers were grown by ammonia-MBE on SiC substrates. Fabricated devices showed excellent characteristics: a maximum drain current density > 1.25 A/mm, maximum transconductance of 250 mS/mm, fT of 103 GHz and fMAX of 170 GHz were measured for devices with 0.13 μm gate length. These are the highest ever reported for material grown by ammonia-MBE.
Date of Publication: 20 March 2003