Referenced Items are not available for this document.
AlGaN/GaN HFET layers were grown by ammonia-MBE on SiC substrates. Fabricated devices showed excellent characteristics: a maximum drain current density > 1.25 A/mm, maximum transconductance of 250 mS/mm, fT of 103 GHz and fMAX of 170 GHz were measured for devices with 0.13 μm gate length. These are the highest ever reported for material grown by ammonia-MBE.
Published in:
Electronics Letters
(Volume:39
,
Issue:
6
)
Date of Publication: 20 March 2003
- Page(s):
- 564 - 566
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 7570673
- Digital Object Identifier :
- 10.1049/el:20030354
- Date of Current Version :
- 08 April 2003
- Issue Date :
- 20 March 2003
- Sponsored by :
- Institution of Engineering and Technology
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