Referenced Items are not available for this document.
The authors present a technique to determine the work-function difference from a plot of the threshold voltage (V/sub T/) versus oxide thickness (T/sub ox/) curve. The extraction errors caused by the electrical characteristics of the oxide and the SiO/sub 2//Si interface can be minimized by the V/sub T/-T/sub ox/ technique. The boron segregation coefficient can be calibrated from the slope of the V/sub T/-T/sub ox/ curve. Comparisons between the experimental data and simulation results are made, and good agreement is obtained.<
Published in:
Electron Device Letters, IEEE
(Volume:12
,
Issue:
11
)
Date of Publication: Nov. 1991
- Page(s):
- 638 - 640
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4093343
- Digital Object Identifier :
- 10.1109/55.119223
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov. 1991
- Sponsored by :
- IEEE Electron Devices Society
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