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Stress-induced oxide leakage

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2 Author(s)
Rofan, R. ; Electron Res. Lab., California Univ., Berkeley, CA, USA ; Chenming Hu

Voltage-stress-induced leakage in 5-nm thermal oxides was studied. A correlation between the leakage current and the charge-pumping current was evident in a series of voltage stress, annealing, and restress tests. The close correlation suggests that the leakage may be a result of the oxide-trap assisted tunneling. Data supporting a model involving trap states are presented.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 11 )

Date of Publication:

Nov. 1991

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