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High-power surface emitting semiconductor laser with extended vertical compound cavity

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12 Author(s)

Novel, electrically pumped, vertical compound cavity InGaAs lasers emitting at 980 nm are described. These have generated 1 W continuous-wave multimode and 0.5 W continuous-wave in a fundamental TEM00 mode and single frequency, with 90% coupling efficiency into a singlemode fibre.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 6 )

Date of Publication:

20 March 2003

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