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1.5 μm laser on GaAs with GaInNAsSb quinary quantum well

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8 Author(s)
L. H. Li ; Lab. de Photonique et de Nanostructures, CNRS, Marcoussis, France ; V. Sallet ; G. Patriarche ; L. Largeau
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A 1.50 μm broad area edge emitting laser is demonstrated with a structure grown by molecular beam epitaxy on a GaAs substrate. The active region is based on a single GaInNAsSb quantum well. The threshold current density is 3.5 kA/cm2. Output power over 22 mW per facet is achieved.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 6 )