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Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As

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4 Author(s)
Sadwick, L.P. ; Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA ; Kim, C.W. ; Tan, K.L. ; Streit, D.C.

The authors report electrical measurements on four different metal contacts which formed Schottky barriers to lightly doped complementary n- and p-type Al/sub 0.48/In/sub 0.52/As epitaxial material grown by molecular beam epitaxy on semi-insulating InP substrates. The Schottky contact metals studied were Au, Al, Pt, and tri-layer Ti/Pt/Au. The Schottky barrier heights varied from 0.560 eV for Al on n-type AlInAs to 0.905 eV for Al on p-type AlInAs, with intermediate values for the other metals studied. The sum of n- and p-type Schottky barrier heights for each metal contact ranged from 1.440 to 1.465 eV, in good agreement with the accepted Al/sub 0.48/In/sub 0.52/As bandgap value of 1.45 eV.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 11 )