We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sadwick, L.P. ; Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA ; Kim, C.W. ; Tan, K.L. ; Streit, D.C.

The authors report electrical measurements on four different metal contacts which formed Schottky barriers to lightly doped complementary n- and p-type Al/sub 0.48/In/sub 0.52/As epitaxial material grown by molecular beam epitaxy on semi-insulating InP substrates. The Schottky contact metals studied were Au, Al, Pt, and tri-layer Ti/Pt/Au. The Schottky barrier heights varied from 0.560 eV for Al on n-type AlInAs to 0.905 eV for Al on p-type AlInAs, with intermediate values for the other metals studied. The sum of n- and p-type Schottky barrier heights for each metal contact ranged from 1.440 to 1.465 eV, in good agreement with the accepted Al/sub 0.48/In/sub 0.52/As bandgap value of 1.45 eV.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 11 )