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PMOS transistors in LPCVD polycrystalline silicon-germanium films

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3 Author(s)
T. -J. King ; Center for Integrated Syst., Stanford Univ., CA, USA ; K. C. Saraswat ; J. R. Pfiester

P-channel MOS thin-film transistors (TFTs) have been fabricated in low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon-germanium (poly-SiGe) films using either a low-temperature (>

Published in:

IEEE Electron Device Letters  (Volume:12 ,  Issue: 11 )