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Comparison between the effects of positive noncatastrophic HBM ESD stress in n-channel and p-channel power MOSFETs

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5 Author(s)
Zupac, D. ; Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA ; Baum, K.W. ; Kosier, S.L. ; Schrimpf, R.D.
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The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 10 )