Referenced Items are not available for this document.
The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain.<
Published in:
Electron Device Letters, IEEE
(Volume:12
,
Issue:
10
)
Date of Publication: Oct. 1991
- Page(s):
- 546 - 549
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4047811
- Digital Object Identifier :
- 10.1109/55.119184
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct. 1991
- Sponsored by :
- IEEE Electron Devices Society
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