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4H-silicon carbide Schottky barrier diodes for microwave applications

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3 Author(s)
Eriksson, J. ; Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden ; Rorsman, N. ; Zirath, H.

In this paper, physical models for vertical 4H-silicon carbide (4H-SiC) Schottky diodes are used to develop a design method, where a maximum cutoff frequency for a given punch-through is achieved. The models presented are also used to extract microwave simulator computer-aided design (CAD) models for the devices. A device process was developed and Schottky diodes were fabricated in-house. Characterization of the devices was performed and compared to the theoretical models with good agreement. A demonstrator singly balanced diode mixer was simulated using the developed models. The mixer was fabricated using the in-house developed diodes, and measurements on the mixer show good agreement with the CAD simulations. A conversion loss of 5.2 dB was achieved at 850 MHz, and an excellent IIP3 of 31 dBm at 850-MHz RF was measured, at 30-dBm PLO. These results verify the enhanced properties of the SiC Schottky diode compared to other nonwide bandgap diodes.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:51 ,  Issue: 3 )