By Topic

An analytical model for back-gate effects on ultrathin-film SOI MOSFET's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
H. T. Chen ; Sch. of Electr. Eng., New South Wales Univ., Kensington, NSW, Australia ; R. S. Huang

An analytical model including the semiconducting substrate effect for silicon-on-insulator (SOI) MOSFET threshold and subthreshold operation is presented. The potential drop across the substrate tends to reduce the front-gate threshold voltage as well as subthreshold swing. However, if the substrate or the back-gate surface is accumulated, the substrate effects can be neglected. Five comprehensive operation regions under various bias conditions are distinguished and discussed for the first time.<>

Published in:

IEEE Electron Device Letters  (Volume:12 ,  Issue: 8 )